Modul G InGaAs photodetector

LD 4741081
Modul G InGaAs photodetector
Modul G InGaAs photodetector

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Description

InGaAs Photodiode for measurements in the NIR beyond the bandgap of silicon. Typically used in experiments using 1550 nm or 1300 nm wavelengths. 4 pin plug for connection with 474 306.

Technical data

  • Sensitive Area: 0.3 mm diameter
  • Responsivity: 0.85 A/W @ 1300 nm
  • Wavelength range: 850 ... 1650 nm

Scope of delivery

1 4741084 InGaAs Photodetector LD
1 474209  8  Mounting Plate C25 with Carrier 20 mm LD

Related Documents

PDF (Experiment description) PDF (Experiment description) P5.8.6.4 Frequency doubling, 1320 nm ? 660 nm
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